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| Target Data 05/01 40MT120UH "HALF-BRIDGE" IGBT MTP Features * UltraFast Non Punch Through (NPT) Technology * Positive VCE(ON)Temperature Coefficient * 10s Short Circuit Capability * HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery * Low Diode VF * Square RBSOA * Aluminum Nitride DBC * Optional SMT Thermystor Inside * Very Low Stray Inductance Design for High Speed Operation UltraFast NPT IGBT VCES = 1200V VCE(on) typ. = 3.1V @ VGE = 15V, IC = 40A TC = 25C Benefits * * * * * * * * * Optimized for Welding, UPS and SMPS Applications Rugged with UltraFast Performance Benchmark Efficiency above 20KHz Outstanding ZVS and Hard Switching Operation Low EMI, requires Less Snubbing Excellent Current Sharing in Parallel Operation Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters V CES IC ICM ILM I F Max 1200 @ TC = 25C @ TC = 100C 80 40 200 200 @ TC = 100C 20 120 20 2500 800 330 @ TC = 25C @ TC = 100C Units V A Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Diode Continuous Forward Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation IFM VGE V ISOL PD V W 1 40MT120UH Target Data 05/01 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters V(BR)CES V CE(on) V GE(th) V GE(th) / T J g fe I CES V FM I GES Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Collector-to-Emitter Leaking Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min Typ Max Units Test Conditions 1200 3.1 3.9 4.4 250 2.0 2.35 200 6 mV/C S A V nA V GE = 0V, V CE = 1200V I F = 40A, V GE = 0V I F = 40A, V GE = 0V, T J = 125C V GE = 20V V V GE V GE V GE IC = = 0V, I C = 250A = 15V, I C = 40A = 15V, I C = 40A, T J = 125C 0.5mA Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameters Qg Qge Qgc E on Eoff Etot E on Eoff Etot Cies C oes Cres Erec trr Irr Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min Typ Max Units Test Conditions 395 56 190 1500 1220 2720 950 850 1800 5100 490 200 1600 300 32 nC IC = 40A VCC = 600V VGE = 15V TJ = 125C Energy losses include tail and diode reverse recovery J TJ = 25C Energy losses include tail and diode reverse recovery pF J ns A VGE = 0V VCC = 30V f = 1.0 MHz TJ = 125C VCC = 600V, IC = 40A VGE = 15V, Rg = 5, L = 200H Thermal- Mechanical Specifications Parameters TJ T STG RthJC RthCS Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Weight IGBT Diode Module 0.06 66 g (Heatsink Compound Thermal Conductivity = 1 W/mK) Min - 40 - 40 Typ Max 150 125 0.35 0.9 Units C C/ W 2 40MT120UH Target Data 05/01 Outline Table Dimensions in millimeters Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 05/01 3 |
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